Powering clock tree circuitry using internal voltages

ABSTRACT

In some embodiments, clock input buffer circuitry and divider circuitry use a combination of externally-suppled voltages and internally-generated voltages to provide the various clock signals used by a semiconductor device. For example, a clock input buffer is configured to provide second complementary clock signals responsive to received first complementary clock signals using cross-coupled buffer circuitry coupled to a supply voltage and to drive the first complementary clock signals using driver circuitry coupled to an internal voltage. In another example, a divider circuitry may provide divided clock signals based on the second complementary clock signals via a divider coupled to the internal voltage and to drive the divided clock signals using driver circuitry coupled to the supply voltage. A magnitude of the supply voltage may be less than a magnitude of the internal voltage.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.16/271,679, filed Feb. 8, 2019. This application is incorporated byreference herein in its entirety and for all purposes.

BACKGROUND OF THE INVENTION

High data reliability, high speed of memory access, low power, andreduced chip size are features that are demanded from semiconductormemory. Within a memory, it is often desirable for circuitry to directlyuse external supply voltages. However, because external supply voltagesare often tied to many other devices within a system, they may havejitter or may fluctuate. Voltage fluctuations may affect someapplications that are sensitive to noise, such as clock signalgenerators. As clock speeds increase, clock signal generators may becomemore sensitive to timing issues caused by a noisy power supply, whichmay affect reliability and robustness of the memory device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram of a semiconductor device, inaccordance with an embodiment of the present disclosure.

FIG. 2 is a block diagram of part of a semiconductor device inaccordance with an embodiment of the disclosure.

FIG. 3 is a block diagram of part of a WCK input circuit in accordancewith an embodiment of the disclosure.

FIG. 4 is an illustration of an exemplary timing diagram depictingoperation of clock signal generators in accordance with embodiments ofthe disclosure.

DETAILED DESCRIPTION

Certain details are set forth below to provide a sufficientunderstanding of embodiments of the disclosure. However, it will beclear to one skilled in the art that embodiments of the disclosure maybe practiced without these particular details. Moreover, the particularembodiments of the present disclosure described herein are provided byway of example and should not be used to limit the scope of thedisclosure to these particular embodiments. In other instances,well-known circuits, control signals, timing protocols, and softwareoperations have not been shown in detail in order to avoid unnecessarilyobscuring the disclosure.

Some of the material described in this disclosure includes devices andtechniques for using different voltages within clock buffers to provideclock signals for use in a semiconductor device, such as for read andwrite operations in a memory device. For example, many memory devices,such as double data rate (DDR) DRAM devices, including DDR4, DDR5, lowpower DDR5 (LPDDR5), graphics DDR (GDDR) DRAM devices, include circuitryto perform read and write operations. Many different clock signals canbe employed to allow the memory device to provide high performancereading and writing from and into the memory.

Clock signals may be provided to control the read and write circuitrysuch that data is provided and received according to specified timing.In high speed applications, small deviations in clock signal timing mayaffect reliability of the memory. Fluctuations in voltages powering theclock buffers may affect this timing. Thus, internally-generatedvoltages may be desirable to mitigate voltage fluctuations onexternally-supplied voltages, but this increases current draw on supplyvoltages used to generate the internal voltages.

Therefore, this disclosure describes examples of clock input buffercircuitry and divider circuitry that use a combination ofexternally-suppled voltages and internally-generated voltages to providethe various clock signals used by the semiconductor device.

For example, a clock input buffer may be configured to receive firstcomplementary clock signals and may include a first and second stageeach coupled to a first and second supply voltages. Responsive to thefirst complementary clock signals, the first and second stage mayprovide second complementary clock signals based on the first and secondsupply voltages. The clock input buffer may further include a pair ofdriver circuits coupled to an internal voltage and the second supplyvoltage and configured to receive the second complementary clocksignals. In response to the second complementary clock signals, the pairof driver circuits may provide third complementary clock signals inresponse to the second complementary clock signals and based on theinternal voltage and the second supply voltage.

Further, a divider circuit may be coupled to the internal voltage andthe second supply voltage and configured to provide a divided clocksignal (e.g., or a plurality of divided clock signals) in response tothe third complementary clock signals and based on the internal voltageand the second supply voltage. The divider circuit may include an outputbuffer coupled to the first and second supply voltages and configured toprovide a second divided clock signal in response to the divided clocksignal based on the first and second supply voltages. Use of theinternal voltage to generate the divided clock signals may mitigatejitter caused by voltage fluctuations in the first supply voltage, whileuse of the first supply voltage to drive the divided clock signal maylimited power consumption to generate the internal voltage.

FIG. 1 is a schematic block diagram of a semiconductor device 100, inaccordance with an embodiment of the present disclosure. Thesemiconductor device 100 may include a WCK input circuit 105, a dividerand buffer circuit 107, an address/command input circuit 115, an addressdecoder 120, a command decoder 125, a plurality of row (e.g., firstaccess line) decoders 130, a memory cell array 145 including senseamplifiers 150 and transfer gates 195, a plurality of column (e.g.,second access line) decoders 140, a serializer/deserializer (SERDES)circuitry 165, an input/output (I/O) circuit 160, and a voltagegenerator circuit 190. The semiconductor device 100 may include aplurality of external terminals including address and command terminalscoupled to command/address bus 110, clock terminals CK and/CK, dataterminals DQ, DQS, and DM, and power supply terminals VDD1, VDD2, VSS,VDDQ, and VSSQ. The semiconductor device may be mounted on a substrate,for example, a memory module substrate, a mother board or the like.

The memory cell array 145 includes a plurality of banks 0-N, with eachbank 0-N including a plurality of word lines WL, a plurality of bitlines BL, and a plurality of memory cells MC arranged at intersectionsof the plurality of word lines WL and the plurality of bit lines BL. Theselection of the word line WL for each bank is performed by acorresponding row decoder 130 and the selection of the bit line BL isperformed by a corresponding column decoder 140. The plurality of senseamplifiers 152 are provided for their corresponding bit lines BL andcoupled to at least one respective local I/O line further coupled to arespective one of at least two main I/O line pairs, via transfer gatesTG 195, which function as switches. In some examples, the senseamplifiers 150 may include threshold voltage compensation circuitryconfigured to compensate for threshold voltage differences betweencomponents of the sense amplifier. Threshold voltage differences mayexist due to process, voltage, and temperature (PVT) variance amongvarious components.

The address/command input circuit 115 may receive an address signal anda bank address signal from outside (e.g., via a memory controller) atthe command/address terminals via the command/address bus 110 and maytransmit the address signal and the bank address signal to the addressdecoder 120. The address decoder 120 may decode the address signalreceived from the address/command input circuit 115 and provide a rowaddress signal XADD to the row decoder 130, and a column address signalYADD to the column decoder 140. The address decoder 120 may also receivethe bank address signal and provide the bank address signal BADD to therow decoder 130 and the column decoder 140.

The address/command input circuit 115 may also receive command signalsand chip select signals from outside (e.g., from the memory controller)at the command/address terminals via the command/address bus 110 and mayprovide the command signals and the chip select signals to the commanddecoder 125. The command signals may include various memory commands,such as access (e.g., read/write) commands. The chip select signalsselect the semiconductor device 100 to respond to commands and addressesprovided to the command and address terminals That is, in response toreceipt of an active chip select signal at the semiconductor device 100,commands and addresses at the command/address terminals via thecommand/address bus 110 may be decoded to perform memory operations. Thecommand decoder 125 may decode the command signals to generate variousinternal command signals. For example, the internal command signals mayinclude a row command signal to select a word line, a column commandsignal, such as a read command or a write command, to select a bit line.The internal command signals can also include output and inputactivation commands, such as clocked command.

Accordingly, when a read command is issued and a row address and acolumn address are timely supplied with the read command, read data isread from a memory cell in the memory cell array 145 designated by therow address and the column address. The read command may be received bythe command decoder 125. Read/write amplifiers of the SERDES circuitry165 may receive the read data DQ and provide the read data DQ to the I/Ocircuit 160. The I/O circuit 160 may provide the read data DQ to outsidevia the data terminals DQ, together with a data mask signal at the datamask terminal DM. The read data may be provided at a time defined byread latency RL information that can be programmed in the semiconductordevice 100, for example, in a mode register (not shown in FIG. 1). Theread latency RL information RL may be defined in terms of clock cyclesof the CK clock signal. For example, the read latency RL information maybe defined as a number of clock cycles of the CK signal after the readcommand is received at the semiconductor device 100 when the associatedread data is provided at an output via the data terminals DQ and DM.

Similarly, when the write command is issued and a row address and acolumn address are timely supplied with the write command, and then theI/O circuit 160 may receive write data at the data terminals DQ,together with a data mask DM signal and provide the write data via theread/write amplifiers of the SERDES circuitry 165. The SERDES circuitry165 may provide the write data to the memory cell array 145. The writecommand may be received by the command decoder 125. Thus, the write datamay be written in the memory cell designated by the row address and thecolumn address. The write data and the data mask signal may be providedto the data terminals DQ and DM, respectively, at a time that is definedby write latency WL information. The write latency WL information may beprogrammed in the semiconductor device 100, for example, in the moderegister (not shown in FIG. 1). The write latency WL information may bedefined in terms of clock cycles of a clock signal CK. For example, thewrite latency WL information may be a number of clock cycles of the CKsignal after receipt of the write command at the semiconductor device100 when the associated write data and data mask signal are received atthe data terminals DQ and DM.

Turning to the explanation of the external terminals included in thesemiconductor device 100, the power supply terminals may receive powersupply voltages VDD1, VDD2, and VSS. These power supply voltages VDD1,VDD2, and VSS may be supplied to a voltage generator circuit 190. Thevoltage generator circuit 190 may generate various internal voltages,VPP, VOD, VARY, VPERI, VIB, and the like based on the power supplyvoltages VDD1, VDD2, and VSS. Specifically, the internal voltage VIB maybe generated using the VDD1 voltage. The internal voltage VIB may have agreater magnitude than the supply voltage VDD2. The internal voltage VPPis mainly used in the row decoder 130 and column decoder 140, theinternal voltages VOD and VARY are mainly used in the sense amplifiers150 included in the memory cell array 145, the internal voltage VIB(along with the power supply voltages VDD2 and VSS) is used in the WCKinput circuit 105 and the divider and buffer circuit 107, and theinternal voltage VPERI is used in many other circuit blocks. The I/Ocircuit 160 may receive the power supply voltages VDDQ and VSSQ. Forexample, the power supply voltages VDDQ and VSSQ may be the samevoltages as the power supply voltages VDD1 and VSS, respectively.However, the dedicated power supply voltages VDDQ and VSSQ may be usedfor the I/O circuit 160.

The clock terminals WCK_T and WCK_N may receive an external clock signalWCK_T and a complementary external clock signal WCK_N, respectively. TheWCK_T and WCK_N clock signals may be write clock signals, in someexamples. The WCK_T and WCK_N clock signals may be supplied to a WCKinput circuit 105. The WCK input circuit 105 may generate complementaryinternal clock signals T and N based on the WCK_T and WCK_N clocksignals. The WCK input circuit 105 may provide the T and N clock signalsto the divider and buffer circuit 107. The divider and buffer circuit107 may generate phase and frequency controlled internal clock signalsPHASE0-3 based on the T and N clock signals T and N and a clock enablesignal CKE (not shown in FIG. 1). The PHASE 0-3 clock signals may bephase shifted relative to one another by 90 degrees. For example, thePHASE 0 clock signal is phased-shifted 0 degrees relative to theinternal clock signal T, the PHASE 1 clock signal is phased-shifted 90degrees relative to the internal clock signal T, the PHASE 2 clocksignal is phased-shifted 180 degrees relative to the internal clocksignal T, and the PHASE 3 clock signal is phased-shifted 270 degreesrelative to the internal clock signal T.

The divider and buffer circuit 107 may provide the PHASE 0-3 clocksignals to the SERDES circuitry 165 and to the I/O circuit 160. TheSERDES circuitry 165 may support high speed read and write operations bydeserializing high speed write data and serializing high speed readdata. For example, during a high speed write operation, the I/O circuit160 may receive and buffer (e.g., via input buffers) serialized writedata in response to the PHASE 0-3 clock signals. The SERDES circuitry165 may be configured to retrieve the serialized write data from theinput buffers of the I/O circuit 160 responsive to the PHASE 0-3 clocksignals, and deserialize the serialized write data (e.g., make itparallel) to provide deserialized write data. The SERDES circuitry 165may provide the deserialized write data to memory cell array 145. Thus,during a high speed write operation, data is received at I/O circuit 160via the data terminals DQ and is deserialized using the SERDES circuitry165 using the PHASE 0-3 clock signals.

Because the PHASE 0-3 clock signals are used in high speed readoperations, accuracy and precision of relative timing of the PHASE 0-3clock signals may be important to ensure read data is provided to thedata terminals DQ and DM at an expected time according to the readlatency RL information. Thus, to generate the internal clock signals Tand N and the PHASE 0-3 clock signals, some circuitry of the WCK inputcircuit 105 and the divider and buffer circuit 107, respectively, may becoupled to (e.g., powered by) the power supply VDD2 and other circuitryof the WCK input circuit 105 and the divider and buffer circuit 107 maybe coupled to the internal voltage VIB. Because the supply voltage VDD2is an external voltage and may be provided to other semiconductordevices, the supply voltage VDD2 may fluctuate (e.g., become noisy) aspower consumption by those other connected semiconductor devices changesover time. Noise on the supply voltage VDD2 may affect timing (e.g.,transition timing) of circuitry of the WCK input circuit 105 and thedivider and buffer circuit 107. Because the internal voltage VIB isinternally generated in the voltage generator circuit 190, it may bemore stable (e.g., less susceptible to noise or fluctuations) than thesupply voltage VDD2. Therefore, to protect against the noise in thesupply voltage VDD2, the internal voltage VIB may be used to powercircuitry of the WCK input circuit 105 and the divider and buffercircuit 107. However, increased use of the internal voltage VIB by theWCK input circuit 105 and the divider and buffer circuit 107 mayincrease current drawn on the supply voltage VDD1 by the voltagegenerator circuit 190 to generate the internal voltage VIB. In someimplementations, the semiconductor device 100 limited to a specificcurrent draw on the supply voltage VDD1. To mitigate an increase in thecurrent drawn to generate the internal voltage VIB, use of the internalvoltage VIB to power the WCK input circuit 105 and the divider andbuffer circuit 107 may be used by a subset of the circuitry of the WCKinput circuit 105 and the divider and buffer circuit 107 that is timingcritical, and other circuitry of the WCK input circuit 105 and thedivider and buffer circuit 107 may be coupled to the supply voltageVDD2.

Additionally, during a high speed read operation, deserialized read datamay be received from the memory cell array 145, and the SERDES circuitry165 may be configured to serialize the deserialized read data responsiveto a read clock signal (not shown) to provide serialized read data. TheSERDES circuitry 165 may provide the serialized read data to the I/Ocircuit 160 responsive to the read clock signal. The read clock signalsmay be used by transceivers of the SERDES circuitry 165 to support thehigh speed read operations to serialize the deserialized read datareceived from the memory cell array 145. That is, the SERDES circuitry165 may serialize the deserialized read data based on timing of the readclock signals provide the serialized read data.

FIG. 2 is a block diagram of part of a semiconductor device 200 inaccordance with an embodiment of the disclosure. The semiconductordevice 200 may include a WCK input circuit 220, a divider and buffercircuit 230, and an I/O circuit 265. The semiconductor device 100 ofFIG. 1 may implement the semiconductor device 200, in some examples. Forexample, the 105 of FIG. 1 may implement the WCK input circuit 220, thedivider and buffer circuit 107 of FIG. 1 may implement the divider andbuffer circuit 230, the I/O circuit 160 of FIG. 1 may implement the I/Ocircuit 265, or any combination thereof. The WCK input circuit 220 andthe divider and buffer circuit 230 may be configured to generatefrequency and phase shifted clock signals PHASE 0-3 based on receivedcomplementary (e.g., phase-shifted 180 relative to one another) clocksignals WCK_T and WCK_N. The WCK_T and WCK_N clock signals may be writeclock signals, in some examples. The 275 may be configured to latch datain data input buffers responsive to the PHASE 0-3 clock signals, such asduring a write operation.

The WCK input circuit 220 may include a first stage 222, a second stage224, a driver 226, and a driver 228. The first stage 222 may receive theWCK_T and WCK_N clock signals and may provide complementary N1N and N1Tclock signals. The second stage 224 may receive the N1N and N1T clocksignals and may provide the complementary N2T and N2N clock signals. Thesecond stage 224 may be cross-coupled such that the N2T and the N2N alsohave complementary duty cycles. The driver 226 and the driver 228 mayprovide internal clock signals T and N, respectively, responsive to theN2T and N2N clock signals, respectively. The T and N clock signals maybe complementary. Within the WCK input circuit 220, circuitry of thefirst stage 222 and the second stage 224 may be coupled to (e.g.,powered by) a supply voltage VDD2 (e.g., a first voltage or first supplyvoltage). Circuitry of the driver 226 and the driver 228 may be coupledto an internal voltage VIB (e.g., a second voltage or second supplyvoltage). The internal voltage VIB may be generated from a supplyvoltage VDD1. The internal voltage VIB may have a greater magnitude thanthe supply voltage VDD2. For example, the internal voltage VIB may havea magnitude of 1.2 volts, and the supply voltage VDD2 may have amagnitude between 0.96 volts and 1.12 volts. The supply voltage VDD1 mayhave a magnitude of 1.6 volts.

The divider and buffer circuit 230 may include a divider circuit 232 anddrivers 234(0)-(3). The divider circuit 232 may receive the T and Nclock signals and may divide the T and N clock signals to providefrequency and phase adjusted divided phase clock signals DP0-3. The DP0-3 clock signals may have a frequency that is half of a frequency ofthe T and N clock signals, and may be phase shifted relative to oneanother by 90 degrees. For example, the DP0 clock signal may bephased-shifted 0 degrees relative to the T clock signal T, the DP1 clocksignal may be phased-shifted 90 degrees relative to the T clock signal,the DP2 clock signal may be phased-shifted 180 degrees relative to the Tclock signal, and the DP3 clock signal may be phased-shifted 270 degreesrelative to the T clock signal. Each of the drivers 234(0)-(3) may drivea respective one of the DP0-3 clock signals at an output as the PHASE0-3 clock signals. Similar to the DP0-3 clock signals, the PHASE 0-3clock signals may be phase shifted relative to one another by 90degrees. For example, the PHASE 0 clock signal may be phased-shifted 0degrees relative to the T clock signal T, the PHASE 1 clock signal maybe phased-shifted 90 degrees relative to the T clock signal, the PHASE 2clock signal may be phased-shifted 180 degrees relative to the T clocksignal, and the PHASE 3 clock signal may be phased-shifted 270 degreesrelative to the T clock signal. Within the divider and buffer circuit230, circuitry of the divider circuit 232 may be coupled to the internalvoltage VIB, and circuitry of each of the drivers 234(0)-(3) may becoupled to the supply voltage VDD2 due to a current limitation derivedfrom the supply voltage VDD1.

The I/O circuit 265 may include data (e.g., write data) input buffercircuits 266(0)-(X) that each correspond to a respective data terminalDQ0-DQX (e.g., or a data mask terminal DM). Each of the data inputbuffer circuits 266(0)-(N) may include a respective four data inputbuffers 267(00)-(03) to data input buffers 267(X0)-(X3). Each of thedata input buffers 267(00)-(03) to data input buffers 267(X0)-(X3) mayboth latch/store write data (e.g., received from an externaldevice/comptroller) and provide the latched/stored write data responsiveto a respective one of the PHASE 0-3 clock signals. For example, each ofthe data input buffer 267(00), the data input buffer 267(10), . . . ,and the data input buffer 267(X0) may latch/store write data received onthe respective data terminal DQ0-DQX and provide the latched/storedwrite data to a memory array (e.g., the memory cell array 145 of FIG. 1)responsive to the PHASE 0 clock signal. Each of the data input buffer267(01), the data input buffer 267(11), . . . , and the data inputbuffer 267(X1) may latch/store write data received on the respectivedata terminal DQ0-DQX and provide the latched/stored write data to thememory array responsive to the PHASE 1 clock signal. Each of the datainput buffer 267(02), the data input buffer 267(12), . . . , and thedata input buffer 267(X2) may latch/store write data received on therespective data terminal DQ0-DQX and provide the latched/stored writedata to the memory array responsive to the PHASE 2 clock signal. Each ofthe data input buffer 267(03), the data input buffer 267(13), . . . ,and the data input buffer 267(X3) may latch/store write data received onthe respective data terminal DQ0-DQX and provide the latched/storedwrite data to the memory array responsive to the PHASE 3 clock signal.In some examples the latched/stored write data may be provided to thememory array via a serializer/deserializer circuit, such as theserializer/deserializer circuit 165 of FIG. 1.

In operation, the WCK input circuit 220 may receive the WCK_T and WCK_Nclock signals and may provide the T and N clock signals based on theWCK_T and WCK_N clock signals. Some circuitry of the WCK input circuit220 may be coupled to the supply voltage VDD2 (e.g., the first stage 222and the second stage 224), while other circuitry of the WCK inputcircuit 220 may be coupled to the internal voltage VIB (e.g., the driver226 and the driver 228). The first stage 222 and the second stage 224are configured to provide the N2T and the N2N clock signals havingcomplementary phases and duty cycles based on the WCK_T and WCK_N clocksignals. The first stage 222 is a first stage of the WCK input circuit220 that is configured to provide the N1N and N1T clock signals to drivecircuitry of the second stage 224. The N1N and the N1T clock signals arebased on the WCK_T and WCK_N clock signals. The second stage 224 is asecond stage of the WCK input circuit 220 that is configured to providethe N2T and the N2N clock signals using cross-coupled circuitry toprovide complementary phases and duty cycles on the N2T and N2N signals.The logic high and logic low values of the NIT, TIN, N2N, and N2T clocksignals may be based on the supply voltages VDD2 and VSS, respectively.

The driver 226 may be configured to drive the T clock signal based onthe N2T clock signal and the driver 228 may be configured to drive the Nclock signal based on the N2N clock signal. The T and N clock signalsmay be used by the divider and buffer circuit 230 to provide the PHASE0-3 clock signals. Because the PHASE 0-3 clock signals are used in highspeed write operations, accuracy and precision of relative timing of thePHASE 0-3 clock signals may be important to ensure write data iscaptured at the data input buffer. When the multiple frequency-adjustedand phase-shifted DP0-3 clock signals are derived from the T and N clocksignals, maintaining relative transition timing over time is importantto ensuring this accuracy is maintained. Thus, the driver 226 and thedriver 228 may generate the T and N clock signals, and the dividercircuit 232 may generate the DP0-3 clock signals using the internalvoltage VIB, which may be more stable and less noisy than the supplyvoltage VDD2. The logic high and logic low values of the T and N clocksignals and the DP0-3 clock signals may be based on the internal voltageVIB and the supply voltage VSS, respectively.

The divider circuit 232 may provide the DP0-3 clock signals having halfof the frequency of the T and N clock signals, and may be phase-shiftedby 90 degrees relative to one another. Each of the drivers 234(0)-(3)receive a respective one of the DP0-3 clock signals, and may drive therespective one of the DP0-3 clock signals at an output as a respectiveone of the PHASE 0-3 clock signals. The logic high and logic low valuesof the PHASE 0-3 clock signals may be based on the supply voltages VDD2and VSS, respectively.

The I/O circuit 265 may latch/store respective write data received onthe data terminals DQ0-DQX at the data input buffer circuits 266(0)-(X)and may provide the latched/stored write data to the memory array. Insome examples, one of the data input buffer circuits 266(0)-(X) maycorrespond to a data mask DM signal. Each of the data input buffers267(00)-(03) to data input buffers 267(X0)-(X3) within the data inputbuffer circuits 266(0)-(X), respectively, may latch/store and providewrite data received on the respective data terminal DQ0-DQX responsiveto a respective one of the PHASE 0-3 clock signals. The data inputbuffers 267(00)-(03) of each of the data input buffer circuits266(0)-(X) may be accessed by a serializer/deserializer to deserializethe latched/stored write data responsive to the PHASE 0-3 clock signals.It is appreciated that one or more of the first stage 222, the secondstage 224, and/or the drivers 234(0)-(3) may be coupled to the internalvoltage VIB, in some examples, without departing from the scope of thedisclosure. In addition, the PHASE 0-3 clock signals may be applied toread data provided in parallel (e.g., deserialized) from the memory cellarray. For example, the deserialized read data may be deserialized(e.g., via the serializer/deserializer) by latching/storing parts of thedeserialized read data at individual output buffers of the I/O circuit265 responsive to the PHASE 0-3 clock signals, and the I/O circuit 265may provide the serialized read data to the respective data terminalDQ0-DQX responsive to the PHASE 0-3 clock signals.

FIG. 3 is a block diagram of part of a WCK input circuit 320 inaccordance with an embodiment of the disclosure. The WCK input circuit320 may include a current-mode logic (CML) buffer 304, a first stage(e.g., differential amplifier circuit) 322, a second stage (e.g.,cross-coupled buffer circuit with de-emphasis resistors 388 and 389)324, a driver 326, and a driver 328. The WCK input circuit 105 of FIG. 1and/or the WCK input circuit 220 of FIG. 2 may implement the WCK inputcircuit 320, in some examples. The WCK input circuit 320 may beconfigured to generate complementary (e.g., phase-shifted 180 relativeto one another) clock signals T and N based on received complementaryclock signals WCK_T and WCK_N.

The CML buffer 304 may be configured to circuitry of the first stage322. The CML buffer 304 may be provided to support the WCK_T and WCK_Nclock signals operating at a high frequency, with a current source 372of the CML buffer 304 controlling power consumption by providing aconstant current output. The CML buffer 304 may include a p-typetransistor 374 controlled by the WCK_T signal to provide a first signalto the first stage 322 and a p-type transistor 376 controlled by theWCK_N clock signal to provide a second signal to the first stage 322.The first signal may be provided from a node between the p-typetransistor 374 and a resistance that coupled to the supply voltage VSS,and the second signal may be provided from a node between the p-typetransistor 376 and a resistance that coupled to the supply voltage VSS.The first signal may be complementary to the WCK_T signal and the secondsignal may be complementary to the WCK_N signal. The current source 372may be coupled to a supply voltage VDD2.

The first stage 322 may provide complementary clock signals N1N and N1Tbased on the first and second signals received from the CML buffer 304.The first stage 322 may include a differential amplifier 381 configuredto provide the N1N clock signal and a differential amplifier 382configured to provide the N1T clock signal. The first signal is providedto a positive input of the differential amplifier 381 and a negativeinput of the differential amplifier 382, and the second signal isprovided to a negative input of the differential amplifier 381 and apositive input of the differential amplifier 382. Accordingly, based onthis inverted coupling of the first and second signals, the N1N and N1Tclock signals may be complementary. The differential amplifier 381 andthe differential amplifier 382 may be coupled to the supply voltagesVDD2 and VSS.

The second stage 324 may receive the N1N and N1T clock signals and mayprovide the complementary N2T and N2N clock signals. The second stage324 may include a first inverter (e.g., a p-type transistor 383 and ann-type transistor 384 coupled in series) configured to provide the N2Tclock signal responsive to the N1N clock signal. The second stage 324may further include a second inverter (e.g., a p-type transistor 386 andan n-type transistor 387 coupled in series) configured to provide theN2N clock signal responsive to the N1T clock signal. To ensure dutycycles of the N2T and N2N clock signals are complementary, the secondstage 324 may further include a p-type transistor 385 coupled to the N2Tclock signal and controlled by the N2N clock signal, and a p-typetransistor 388 coupled to the N2N clock signal and controlled by the N2Tclock signal. Effectively, the p-type transistor 385 and the p-typetransistor 388 may cross-couple the N2T and N2N clock signals to providea complementary duty cycle relationship. The p-type transistor 383, thep-type transistor 385, the p-type transistor 386, and the p-typetransistor 388 may be coupled to the supply voltage VDD2. The n-typetransistor 384 and the n-type transistor 387 may be coupled to thesupply voltage VSS. Additionally, the second stage 324 may include aresistor 389 to make the N1N and N2T short-circuited and anotherresistor 388 to make the N1T and N2N short-circuited. Each of theresistors 388 and 389 is provided to perform a de-emphasis operation onthe respective N2N and N2T clock signals. The de-emphasis operationprevents the N2N and N2T clock signals from a full voltage swing betweenthe supply voltages VDD2 and VSS, which may make it easier to transferthe N2N and N2T clock signals to the next state.

The driver 326 and the driver 328 may provide complementary internalclock signals T and N responsive to the N2T and N2N clock signals,respectively, received from the second stage 324. The driver 326 mayinclude serially-coupled inverters 392 and 394, and the driver 328 mayinclude serially-coupled inverters 396 and 398. It is appreciated thateach of the driver 326 and the driver 328 may include more than twoserially-coupled inverters without departing from the scope of thedisclosure, although the driver 326 and the driver 328 may beimplemented with an equal number of serially-coupled inverters tomaintain a complementary timing relationship between the T and Nsignals. The serially-coupled inverters 392 and 394 of the driver 326and the serially-coupled inverters 396 and 398 may be coupled to aninternal voltage VIB and the supply voltage VSS. Here, N2T and N2N clocksignals are controlled to be fully amplified between the internalvoltage VIB and the supply voltage VSS.

In operation, the WCK input circuit 320 may receive the WCK_T and WCK_Nclock signals and may provide the T and N clock signals based on theWCK_T and WCK_N clock signals. The CML buffer 304, the first stage 322,and the second stage 324 may be coupled to the supply voltages VDD2 andVSS, while the driver 326 and the driver 328 are coupled to the internalvoltage VIB and the supply voltage VSS. The logic high and logic lowvoltages of the WCK_T and WCK_N clock signals may be based on aspecified voltages VIH and VIL, respectively, which have a voltagedifferential that is less than a voltage differential between the supplyvoltages VDD2 and VSS. Responsive to the WCK_T and WCK_N clock signals,the p-type transistor 374 and the p-type transistor 376 (e.g., and thecurrent source 372) may provide the first and second signals,respectively. Responsive to the first and second signals provided by theCML buffer 304, the differential amplifier 381 and the differentialamplifier 382 of the first stage 322 may be configured to provide theN1N and the N1T clock signals, respectively, using differential logic.Coupling of the first and second signals to inputs of the differentialamplifier 381 and the differential amplifier 382 may be inverted suchthat the N1N and the N1T signals are complementary. The logic high andlogic low voltages of the N1N and N1T clock signals may be based on thesupply voltages VDD2 and VSS, respectively. However, because of the highspeed operation and circuit loss, the magnitudes of the logic high andlogic low voltages (e.g., VH1 and VL1, respectively) of the N1N and N1Tclock signals may have a voltage differential that is greater than theVIH and VIL voltages and less than a voltage differential between thesupply voltages VDD2 and VSS.

The first inverter (e.g., the p-type transistor 383 and the n-typetransistor 384 coupled in series) of the second stage 324 is configuredto provide the N2T clock signal responsive to the N1N clock signal, andthe second inverter (e.g., the p-type transistor 386 and the n-typetransistor 387 coupled in series) is configured to provide the N2N clocksignal responsive to the N1T clock signal. The N2T and N2N clock signalsare also cross-coupled via the p-type transistor 386 and the p-typetransistor 388 to provide complementary duty cycles on the N2T and N2Nclock signals. The logic high and logic low voltages of the N2T and N2Nclock signals may be based on the supply voltages VDD2 and VSS,respectively, but as explained above with respect to the de-emphasisoperation, the magnitudes of the logic high and logic low voltages(e.g., V2H and V2L, respectively) of the N2T and N2N clock signals mayhave a voltage differential that is greater than the VH1 and VL1voltages and less than a voltage differential between the supplyvoltages VDD2 and VSS.

The driver 326 (e.g., via the serially-coupled inverters 392 and 394)and the driver 328 (e.g., via the serially-coupled inverters 396 and398) may provide The T and N clock signals responsive to the N2T and N2Nclock signals, respectively. The logic high and logic low values of theT and N clock signals may be based on the internal voltage VIB and thesupply voltage VSS, respectively. Because the T and N clock signals maybe used to provide frequency-divided and phase-shifted clock signals(e.g. the PHASE 0-3 clock signals of FIG. 1 and/or the PHASE 0-3 clocksignals of FIG. 2) to be used in high speed write operations, accuracyand precision of relative timing of the T and N clock signals may beimportant for generation of these frequency-divided and phase-shiftedclock signals. Thus, the driver 326 and the driver 328 may generate theT and N clock signals using the internal voltage VIB, which may be morestable and less noisy than the supply voltage VDD2. It is appreciatedthat one or more of the first stage 322 and/or the second stage 324 maybe coupled to the internal voltage VIB, in some examples, withoutdeparting from the scope of the disclosure.

FIG. 4 is an illustration of an exemplary timing diagram 400 depictingoperation of clock signal generators in accordance with embodiments ofthe disclosure. In some examples, the timing diagram 400 may depictoperation of the semiconductor device 100 (e.g., the WCK input circuit105, the divider and buffer circuit 107, and/or the SERDES circuitry165) of FIG. 1, the semiconductor device of FIG. 2, the WCK inputcircuit 320 of FIG. 3, or combinations thereof. The WCK_T and WCK_Nclock signals may correspond to the WCK_T and WCK_N clock signals ofFIGS. 1-3. The N1N and N1T clock signals and the N2T and N2N clocksignals may correspond to the N1N and N1T clock signals and the N2T andN2N clock signals, respectively, of FIGS. 2 and 3. The T and N clocksignals may correspond to the T and N clock signals of FIGS. 1-3. TheDP0-3 clock signals may correspond to the DP0-3 clock signals of FIG. 2.The PHASE 0-3 clock signals may correspond to the PHASE 0-3 clocksignals of FIGS. 1 and 2. The logic high and logic low voltages of theWCK_T and WCK_N clock signals may be based on a specified voltages VIHand VIL, respectively, which have a voltage differential that is lessthan a voltage differential between the supply voltages VDD2 and VSS.The logic high and logic low of the N1N and N1T clock signals may bebased on the supply voltages VDD2 and VSS, but the magnitudes of thelogic high and logic low voltages (e.g., VH1 and VL1, respectively) ofthe N1N and N1T clock signals may have a voltage differential that isgreater than the VIH and VIL voltages and less than a voltagedifferential between the supply voltages VDD2 and VSS. The logic highand logic low voltages of the N2T and N2N clock signals may be based onthe supply voltages VDD2 and VSS, respectively, but as explained abovewith respect to the de-emphasis operation, the magnitudes of the logichigh and logic low voltages (e.g., V2H and V2L, respectively) of the N2Tand N2N clock signals may have a voltage differential that is greaterthan the VH1 and VL1 voltages and less than a voltage differentialbetween the supply voltages VDD2 and VSS.

At time T0, timing the WCK_T clock signal may transition to The VIHvoltage and the WCK_N clock signal may transition to the VIL voltage. Inresponse to transitions of the WCK_T and WCK_N clock signals, the N1Nclock signal may transition to the VH1 voltage and the N1T clock signalmay transition to the VL1 voltage (e.g., via the first stage 222 of FIG.2 and/or the first stage 322 of FIG. 3). In response to transitions ofthe N1N and N1T clock signals, the N2T clock signal may transition tothe VH2 voltage and the N2N clock signal may transition to the VL2voltage (e.g., via the second stage 224 of FIG. 2 and/or the secondstage 324 of FIG. 3). In response to transitions of the N2T and N2Nclock signals, the T clock signal may transition to the internal voltageVIB and the N2N clock signal may transition to the supply voltage VSS(e.g., via the driver 226 and driver 228 of FIG. 2 and/or the driver 326and driver 328 of FIG. 3).

At time T1, timing the WCK_T clock signal may transition to the VILvoltage and the WCK_N clock signal may transition to the VIH voltage. Inresponse to transitions of the WCK_T and WCK_N clock signals, the N1Nclock signal may transition to the VL1 voltage and the N1T clock signalmay transition to the VH1 voltage (e.g., via the first stage 222 of FIG.2 and/or the first stage 322 of FIG. 3). In response to transitions ofthe N1N and N1T clock signals, the N2T clock signal may transition tothe VL2 voltage REF and the N2N clock signal may transition to the VH2voltage (e.g., via the second stage 224 of FIG. 2 and/or the secondstage 324 of FIG. 3). In response to transitions of the N2T and N2Nclock signals, the T clock signal may transition to the supply voltageVSS and the N2N clock signal may transition to the internal voltage VIB(e.g., via the driver 226 and driver 228 of FIG. 2 and/or the driver 326and driver 328 of FIG. 3).

Timing transitions for times T2-T5 may repeat as described with respectto times T0 and T1. The T and N clock signals may be used to generatethe DP0-3 clock signals, such as via the divider circuit 232 of FIG. 2.As shown in the timing diagram 400, the DP0-3 clock signals arephase-shifted (e.g., 90 degrees) relative to one another, and have adifferent frequency than the WCK_T, WCK_N, N1N, N1T, N2T, N2N, N and Tclock signals. The PHASE 0-3 clock signals may be driven on the DP0-3clock signals, respectively, such as via the drivers 234(0)-(3) of FIG.2. The DP0-3 clock signals may be driven based on the internal voltageVIB and the supply voltage VSS, and the PHASE 0-3 clock signals may bedriven based on the supply voltages VDD2 and VSS. Thus, in response totransitions of the T and N clock signals, the DP0 clock signal maytransition to the internal voltage VIB at time T0 and may transition tothe supply voltage VSS at time T2, the DP1 clock signal may transitionto the internal voltage VIB at time T1 and may transition to the supplyvoltage VSS at time T3, the DP2 clock signal may transition to theinternal voltage VIB at time T2 and may transition to the supply voltageVSS at time T4, and the DP3 clock signal may transition to the internalvoltage VIB at time T3 and may transition to the supply voltage VSS attime T5. The PHASE 0-3 clock signals may follow the above-describedtransitions of the DP0-3 clock signals, except to the supply voltageVDD2 instead of the internal voltage VIB.

The timing diagram 400 is exemplary for illustrating operation ofvarious described embodiments. Although the timing diagram 400 depicts aparticular arrangement of signal transitions of the included signals,one of skill in the art will appreciate that additional or differenttransitions may be included in different scenarios without departingfrom the scope of the disclosure, including addition of delays betweenserially-related signals. Further, the depiction of a magnitude of thesignals represented in the timing diagram 400 is not intended to be toscale, and the representative timing is an illustrative example of atiming characteristics.

Although this disclosure has been described in the context of certainpreferred embodiments and examples, it will be understood by thoseskilled in the art that the inventions extend beyond the specificallydisclosed embodiments to other alternative embodiments and/or uses ofthe inventions and obvious modifications and equivalents thereof. Inaddition, other modifications which are within the scope of thisdisclosure will be readily apparent to those of skill in the art basedon this disclosure. It is also contemplated that various combination orsub-combination of the specific features and aspects of the embodimentsmay be made and still fall within the scope of the disclosure. It shouldbe understood that various features and aspects of the disclosedembodiments can be combined with or substituted for one another in orderto form varying mode of the disclosure. Thus, it is intended that thescope of at least some of the present disclosure herein disclosed shouldnot be limited by the particular disclosed embodiments described above.

What is claimed is:
 1. An apparatus comprising: a clock input buffer,responsive to first complementary clock signals, configured to drivesecond complementary clock signals based on a first voltage and a secondvoltage; and a divider circuit configured to provide a divided clocksignal based on the second complementary clock signals, the secondvoltage and a third voltage that is different than the first voltage. 2.The apparatus of claim 1, further comprising a voltage generatorconfigured to generate the third voltage based on the first voltage. 3.The apparatus of claim 2, wherein the voltage generator is furtherconfigured to receive the first voltage from an external voltage supply.4. The apparatus of claim 3, wherein the voltage generator is configuredto receive the second voltage from a second external voltage supply. 5.The apparatus of claim 1, wherein the divider circuit is furtherconfigured to provide a second divided clock signal based on the firstvoltage and the second voltage.
 6. The apparatus of claim 1, wherein theclock input buffer comprises: an amplifier circuit configured to receivethe first complementary clock signals and to provide intermediatecomplementary clock signals; and a buffer configured to provide thesecond complementary clock signals based on the intermediate clocksignals.
 7. The apparatus of claim 6, wherein the amplifier circuitcomprises: a first amplifier configured to provide a first clock signalof the intermediate complementary clock signals based on receipt of thefirst complementary clock signals; and a second amplifier configured toprovide a second clock signal of the intermediate complementary clocksignals based on receipt of the first complementary clock signals. 8.The apparatus of claim 6, wherein the buffer comprises: a first inverterconfigured to provide a first clock signal of the second complementaryclock signals at a first output node based on receipt of the first clocksignal of the intermediate complementary clock signals; and a secondinverter configured to provide a second clock signal of the secondcomplementary clock signals at a second output node based on receipt ofthe second clock signal of the intermediate complementary clock signals.9. The apparatus of claim 8, wherein the first inverter is configured todrive the first clock signal of the second complementary clock signalsusing the first voltage and the second voltage and the second inverteris configured to drive the second clock signal of the secondcomplementary clock signals using the first voltage and the secondvoltage.
 10. The apparatus of claim 1, wherein, based on thecomplementary clock signals and the internal voltage, the dividercircuit is configured to provide a plurality of divided clock signalsincluding the divided clock signal.
 11. The apparatus of claim 10,wherein the divider circuit is configured to provide the plurality ofdivided clock signals having a frequency that is different than afrequency of the second complementary clock signals.
 12. A methodcomprising: responsive to first complementary clock signals, providingsecond complementary clock signals based on a first voltage and a secondvoltage; and providing a divided clock signal in response to the secondcomplementary clock signals and based on the second voltage and a thirdvoltage that is different than the first voltage.
 13. The method ofclaim 12, further comprising generating the third voltage based on thefirst voltage.
 14. The method of claim 13, further comprising receivingthe first voltage from an external voltage supply.
 15. The method ofclaim 14, further comprising receiving the second voltage from a secondexternal voltage supply.
 16. The method of claim 12, further comprisingproviding a second divided clock signal based on the first voltage andthe second voltage.
 17. The method of claim 12, further comprising:providing intermediate complementary clock signals based on the firstcomplementary clock signals and to; and providing the secondcomplementary clock signals based on the intermediate clock signals. 18.The method of claim 17, further comprising providing the intermediatecomplementary clock signals via first and second amplifiers.
 19. Themethod of claim 17, further comprising: providing a first clock signalof the second complementary clock signals via a first inverter based onreceipt of the first clock signal of the intermediate complementaryclock signals; and providing a second clock signal of the secondcomplementary clock signals via a second inverter based on receipt ofthe second clock signal of the intermediate complementary clock signals.20. The method of claim 12, further comprising cross-coupling the firstand second clock signals of the second complementary clock signals.